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| Infrared Light Emitting Diodes LNA4905L GaAs Infrared Light Emitting Diode Unit : mm 5.70.2 2 Max. Not soldered For optical control equipment s Features * High output power, high-efficiency : (15 mW min.) * Quick response, high speed modulation (fC=30 MHz typ.) * Transparent epoxy resin package 50.2 1 4.40.3 1 12.01.0 14.01.0 5.70.2 s Absolute Maximum Ratings Ta=25C Parameter Power dissipation Forward current(DC) Pulse forward current Reverse voltage(DC) Operating ambient temperature Storage temperature * 2-10.15 2-0.60.15 0.60.15 Symbol PD IF IFP VR Topr Tstg Ratings 190 100 1 3 -25 to +85 -30 to +100 Unit mW mA A V C C 1 2.54* 2 Note 1. * : Indicates root dimensions of lead. 2. A dimension is as a reference figure as coming with no a public difference. 1 : Anode 2 : Cathode Note) * : f=100 Hz, Duty cycle=0.1% s Electro-optical Ta=25C3C Parameter Total power output Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Half-power angle Symbol PO P VF IR IF=50 mA IF=50 mA IF=50 mA IF=100 mA VF=3 V The angle when the beam intensity is halved 15 Conditions min 15 880 50 1.7 2.1 10 typ max Unit mW nm nm V A deg Note) 1. Cut-off frequency : 30 MHz 2. LED might radiate red light under large current drive. 1 |
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